Temperature Dependence of Ferroelectricity in Al-Doped HfO<sub>2</sub> Featuring a High <i>P</i> <sub>r</sub> of 23.7 μC/cm<sup>2</sup>
Jiuren Zhou, Zuopu Zhou, Xinke Wang, Haibo Wang, Chen Sun, Kaizhen Han, Yuye Kang, Xiao Gong
Abstract
We experimentally investigated the dependence of ferroelectricity in Al-doped HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HAO) films on the annealing temperatures ranging from 600 °C to 800 °C. Increasing the annealing temperature from 600 °C to 700 °C yields an enhanced remnant polarization (Pr), but a slight reduction in coercive field (EC). While the highest reported Pr of 23.7 μC/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for the HAO films can be obtained with an annealing temperature of 800 °C, an obvious degradation in the uniformity of both Pr and EC is observed. In addition, as the annealing temperature increases, the HAO films suffer from the raised leakage current and the degraded endurance characteristics.