Transient Modeling and Loss Analysis of SiC MOSFETs at Cryogenic and Room Temperatures
Xiaoyuan Chen, Shan Jiang, Yu Chen, Hua Yu Gou, Qi Xie, Boyang Shen
Abstract
In order to fully understand switching transients of SiC power MOSFET, an easy-to-implement transient model is built to evaluate the switching characteristics regarding to the influences of parasitic elements and circuit parameters. Under two testing conditions of room temperature and cryogenic temperature, it is shown that all the simulations generally fit the measurements well with different operating currents and voltages. For the switching energy loss during the turn-on and turn-off transients, further analysis shows that the relative error is less than 20% between the experiments and simulations. By considering the zero-loss superconductor and its equipped cryogenic environment, it can be well expected to explore a new concept of superconducting power electronics involved with superconducting and semiconducting devices in one system.