Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaO<sub><i>x</i></sub> gate dielectric
Yuan Bo Li, T. P. Chen, Xin Ju, Teddy Salim
Abstract
This article demonstrated a transparent TFT which showed synaptic behaviors in either electronic mode or photoelectric mode. Potentiation/depression with large conductance change and ultra-low non-linearity were achieved concurrently.
Topics & Concepts
Photoelectric effectDielectricMaterials scienceOptoelectronicsTransistorChannel (broadcasting)Gate dielectricThin-film transistorElectrical engineeringNanotechnologyEngineeringVoltageLayer (electronics)Advanced Memory and Neural ComputingCCD and CMOS Imaging SensorsNeuroscience and Neural Engineering