Robust, high-performance n-type organic semiconductors
Toshihiro Okamoto, Shohei Kumagai, Eiji Fukuzaki, Hiroyuki Ishii, Go Watanabe, Naoyuki Niitsu, Tatsuro Annaka, Masakazu Yamagishi, Yukio Tani, Hiroki Sugiura, Tetsuya Watanabe, Shun Watanabe, Jun Takeya
Abstract
Organic semiconductors (OSCs) are important active materials for the fabrication of next-generation organic-based electronics. However, the development of n-type OSCs lags behind that of p-type OSCs in terms of charge-carrier mobility and environmental stability. This is due to the absence of molecular designs that satisfy the requirements. The present study describes the design and synthesis of n-type OSCs based on challenging molecular features involving a π-electron core containing electronegative N atoms and substituents. The unique π-electron system simultaneously reinforces both electronic and structural interactions. The current n-type OSCs exhibit high electron mobilities with high reliability, atmospheric stability, and robustness against environmental and heat stresses and are superior to other existing n-type OSCs. This molecular design represents a rational strategy for the development of high-end organic-based electronics.