High performance, amorphous InGaZnO thin-film transistors with ferroelectric ZrO2 gate insulator by one step annealing
Md. Mehedi Hasan, Samiran Roy, Mohit Mohit, Eisuke Tokumitsu, Hye‐Yong Chu, Sung Chul Kim, Jin Jang
Topics & Concepts
Materials scienceFerroelectricityAnnealing (glass)Amorphous solidOptoelectronicsThin-film transistorFabricationOrthorhombic crystal systemNon-volatile memoryNanotechnologyLayer (electronics)DielectricComposite materialCrystallographyCrystal structureMedicineChemistryPathologyAlternative medicineFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing