Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants
Michele Perego, Francesco Caruso, Gabriele Seguini, Elisa Arduca, R. Mantovan, Katia Sparnacci, Michele Laus
Abstract
An effective doping technology for precise control of P atom injection and activation into a semiconductor substrate is presented.
Topics & Concepts
DopantMaterials scienceDopingSubstrate (aquarium)SiliconSemiconductorPhosphorusAtom (system on chip)PolymerDopant ActivationOptoelectronicsNanotechnologyChemical engineeringComposite materialMetallurgyComputer scienceEngineeringGeologyOceanographyEmbedded systemSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignIntegrated Circuits and Semiconductor Failure Analysis