Combination of InZnO/InGaZnO Bi-layered channels prepared by atomic layer deposition and ozone-based gate-stack formation for guaranteeing high field-effect mobility and long-term stability of thin film transistors
Seo-Hyun Moon, Soohyun Bae, Young-Ha Kwon, Nak‐Jin Seong, Kyu-Jeong Choi, Sung‐Min Yoon
Topics & Concepts
Materials scienceAtomic layer depositionStack (abstract data type)OptoelectronicsThin-film transistorLayer (electronics)Deposition (geology)TransistorStability (learning theory)Engineering physicsNanotechnologyElectrical engineeringComputer scienceVoltageEngineeringProgramming languageSedimentMachine learningBiologyPaleontologyThin-Film Transistor TechnologiesZnO doping and propertiesSemiconductor materials and devices