A-Site Doping to Alter Oxygen Vacancy Diffusion in SrTiO<sub>3</sub>
Gil M. Repa, Zachary J. Knepp, Lisa A. Fredin
Abstract
High Resolution Image Download MS PowerPoint Slide Doped SrTiO 3 is a promising material for many applications where oxygen vacancy diffusion is either critical to device function or a source of failure. This work provides new insight into long-range oxygen vacancy diffusion in SrTiO 3 doped with Mn 2+, Cr 3+, or Fe 2+ on the A-site. Density functional theory and the nudged elastic band method are used to calculate oxygen vacancy diffusion barriers adjacent to the dopant and at remote sites. Relative to the pure SrTiO 3 structure, doping was found to raise the diffusion barrier for V O •• vacancies and lower the diffusion barrier for V O x vacancies. Furthermore, a doping trapping radius of 6 Å was found for both the V O x and V O •• vacancies. Counterintuitively, trapping was observed even in supercells where vacancies and dopants are both positively charged. These results provide new insight into how less common A-site doping can change the electronic structure of this important material.