Optical parametric oscillation in silicon carbide nanophotonics
Melissa A. Guidry, Ki Youl Yang, Daniil M. Lukin, A.S. Markosyan, Joshua Yang, M. M. Fejer, Jelena Vučković
Abstract
Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can enable SiC integrated photonics with quality factors exceeding <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mn>10</mml:mn> <mml:mn>7</mml:mn> </mml:msup> </mml:mrow> </mml:math> . We fabricate multimode microring resonators with quality factors as high as 1.1 million, and observe low-threshold ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mn>8.5</mml:mn> <mml:mo>±</mml:mo> <mml:mn>0.5</mml:mn> <mml:mspace width="thickmathspace"/> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">m</mml:mi> <mml:mi mathvariant="normal">W</mml:mi> </mml:mrow> </mml:math> ) optical parametric oscillation using the fundamental mode as well as optical microcombs spanning 200 nm using a higher-order mode. Our demonstration is an essential milestone in the development of photonic devices that harness the unique optical properties of SiC, paving the way toward the monolithic integration of nonlinear photonics with spin-based quantum technologies.