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Ionization of sputtered material in high power impulse magnetron sputtering plasmas—comparison of titanium, chromium and aluminum

Julian Held, Volker Schulz-von der Gathen, Achim von Keudell

2023Plasma Sources Science and Technology16 citationsDOIOpen Access PDF

Abstract

Abstract The ionization of sputtered species in high power impulse magnetron sputtering of titanium, chromium, and aluminum targets is analyzed using Abel-inverted spectroscopic imaging to locate the position of ionization. From the spatial emission of neutrals, it is deduced that most of the sputtered titanium particles become ionized within 0.5 mm distance from the target, whereas sputtered aluminum or chromium can travel much further through the discharge before ionization occurs. Probe measurements reveal the reason for this difference to be the unusually high electron temperature of around 4.5 eV for titanium compared to 2.6 eV and 1.5 eV for aluminum and chromium as the target material, respectively. These probe measurements are then compared to a global model derived from the ionization region model. Excellent agreement between model and measurements can be reached, but only if the transport physics for the confinement of the species is adjusted. Using the model, the difference between the three discharges can be traced back to be mostly caused by the sputter yield. Thus, we propose that ionization in discharges with low-yield materials should generally be expected to occur closer to the target surface, leading the ions to be affected more strongly by the electric field across the magnetic trap region, resulting in a more severe deposition rate loss compared to high-yield materials.

Topics & Concepts

IonizationSputteringHigh-power impulse magnetron sputteringTitaniumChromiumSputter depositionAtomic physicsMaterials scienceIonAluminiumPlasmaYield (engineering)Analytical Chemistry (journal)Impulse (physics)Cavity magnetronChemistryMetallurgyThin filmPhysicsNanotechnologyQuantum mechanicsChromatographyOrganic chemistryMetal and Thin Film MechanicsIon-surface interactions and analysisSemiconductor materials and devices
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