High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation
Quentin Wilmart, Mohamed Boukhicha, H. Graef, D. Mele, José M. Palomo, Michaël Rosticher, Takashi Taniguchi, Kenji Watanabe, Vincent Bouchiat, Emmanuel Baudin, Jean‐Marc Berroir, Erwann Bocquillon, Gwendal Fève, Emiliano Pallecchi, Bernard Plaçais
Abstract
The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze DC and RF transport properties of bottom-gated graphene on boron nitride field effect transistors exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We predict and demonstrate a maximum oscillation frequency exceeding 20 GHz . We discuss the intrinsic 0.1 THz limit of GFETs and envision plasma resonance transistors as an alternative for sub-THz narrow-band detection.