High quality GaN crystal grown by hydride vapor-phase epitaxy on SCAAT<sup>TM</sup>
Kenji Iso, Hirotaka Ikeda, Tae Mochizuki, Yutaka Mikawa, Satoru Izumisawa
Abstract
GaN crystal with 4.2 mm thickness and size lager than 2 inch without cracks and pits was realized by hydride vapor-phase epitaxy (HVPE) on an acidic ammonothermal (SCAATTM) seed. The average threading dislocation (TD) density was as small as 1.4 × 103 cm−2. Multi-photon excitation photoluminescence revealed that complete one-to-one correspondence of TD at the interface between the seed and epilayer was realized. A comparison between HVPE-GaN film grown on SCAATTM seed and that grown on a conventional self-standing HVPE-GaN seed showed the smaller TDD of SCAATTM than conventional one resulted in a smaller change of residual stress in the crystal.
Topics & Concepts
Materials scienceEpitaxyDislocationHydrideVapor phasePhotoluminescenceCrystal (programming language)OptoelectronicsPhase (matter)CrystallographyChemistryNanotechnologyComposite materialMetallurgyLayer (electronics)Organic chemistryProgramming languageThermodynamicsPhysicsMetalComputer scienceGaN-based semiconductor devices and materialsGa2O3 and related materialsMetal and Thin Film Mechanics