Anion-induced robust ferroelectricity in sulfurized pseudo-rhombohedral epitaxial BiFeO<sub>3</sub> thin films <i>via</i> polarization rotation
Guoqiang Xi, Zhao Pan, Yue‐Wen Fang, Jie Tu, Hangren Li, Qianqian Yang, Chen Liu, Huajie Luo, Jiaqi Ding, Shuai Xu, Shiqing Deng, Qingxiao Wang, Dongxing Zheng, Youwen Long, Kuijuan Jin, Xixiang Zhang, Jianjun Tian, Linxing Zhang
Abstract
. According to first-principles calculations and the results of X-ray absorption spectroscopy and high-angle annular dark-field scanning transmission electron microscopy, this enhancement arose from the introduction of S atoms driving the re-distribution of the lone-pair electrons of Bi, resulting in the rotation of the polarization state from the [001] direction to the [110] or [111] one. The presented method of anion-driven polarization rotation might enable the improvement of the properties of oxide materials.
Topics & Concepts
FerroelectricityMaterials sciencePolarization (electrochemistry)IonThin filmEpitaxyMultiferroicsCondensed matter physicsOptoelectronicsNanotechnologyDielectricChemistryPhysical chemistryPhysicsLayer (electronics)Organic chemistryMultiferroics and related materialsFerroelectric and Piezoelectric MaterialsDielectric properties of ceramics