InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors
Liping Liao, Bing Wu, Evgeniya Kovalska, Filipa M. Oliveira, Jalal Azadmanjiri, Vlastimil Mazánek, Lukáš Valdman, Lucie Spejchalová, Cunyun Xu, Petr Levinský, J. Hejtmánek, Zdeněk Sofer
Abstract
in Ge-doped crystals. Additionally, the Mott-Schottky model explored the mechanism of charge transfer and enhanced PEC performance. Band bending at the InSe/InSe(Ge)-electrolyte interface benefits the separation and transformation of photogenerated carriers from the heterostructure to electrolyte due to the tunable energy band alignment. These results indicate that the InSe/InSe(Ge) vdW heterostructure is promising for PEC-type photodetectors, which provide a novel way to utilize 2D vdW heterostructures in optoelectronics.
Topics & Concepts
HeterojunctionMaterials sciencePhotocurrentOptoelectronicsPhotodetectorDopingResponsivityvan der Waals forceCharge carrierBand bendingSchottky barrierElectron mobilityChemistryDiodeMoleculeOrganic chemistry2D Materials and ApplicationsPerovskite Materials and ApplicationsAdvanced Thermoelectric Materials and Devices