2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure
Ru Xu, Peng Chen, Menghan Liu, Jing Zhou, Yimeng Li, Bin Liu, Dunjun Chen, Zili Xie, Rong Zhang, Youdou Zheng
Topics & Concepts
OptoelectronicsMaterials scienceAnodeSchottky barrierSchottky diodeSubstrate (aquarium)SiliconDiodeMetal–semiconductor junctionChemistryElectrodeOceanographyGeologyPhysical chemistryGaN-based semiconductor devices and materialsGa2O3 and related materialsNanowire Synthesis and Applications