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Notable difference between rapid-thermal and microwave annealing on Ge pMOSFETs

Dun‐Bao Ruan, Kuei‐Shu Chang‐Liao, Shih-Han Yi, Fu-Yang Chu, Ji-Syuan Li, Chia‐Wei Hsu, Jiayi Huang, Tzung-Yu Wu

2021Surface and Coatings Technology14 citationsDOI

Topics & Concepts

Materials scienceAnnealing (glass)OptoelectronicsMicrowaveElectron mobilityDielectricMOSFETLeakage (economics)Gate oxideEquivalent oxide thicknessHigh-κ dielectricGate dielectricThermalElectronic engineeringAnalytical Chemistry (journal)TransistorElectrical engineeringComposite materialChemistryThermodynamicsPhysicsEngineeringChromatographyEconomicsMacroeconomicsQuantum mechanicsVoltageSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignThin-Film Transistor Technologies
Notable difference between rapid-thermal and microwave annealing on Ge pMOSFETs | Litcius