Continue the Scaling of Electronic Devices with Transition Metal Dichalcogenide Semiconductors
Fangyuan Zheng, Wanqing Meng, Lain‐Jong Li
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors have emerged as promising candidates for further device scaling. However, the full potential of 2D TMD materials in advanced electronics remains to be explored. In this Mini-Review, we discuss the trends in modern transistor technology and the issues of silicon (Si) moving toward subnanometer technology nodes, highlighting the prospects of 2D materials in overcoming the limitations of conventional Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). We focus on the growth and characterization techniques crucial to assessing the quality and electrical properties of 2D TMD materials. The technical challenges that significantly affect the performance of 2D transistors, such as contact resistance, dielectric scaling, and device architecture, are also discussed. The potential benefits and perspectives of utilizing 2D materials are summarized based on the recent simulation results for both devices and circuits.