Realization of the electric-field driven “one-material”-based magnetic tunnel junction using van der Waals antiferromagnetic MnPX<sub>3</sub> (X: S, Se)
Yichen Jin, Mouhui Yan, Yuriy Dedkov, Elena Voloshina
Abstract
Using electron or hole doping, the top layer of a van der Waals MnPX 3 (X: S, Se) material can be converted to the half-metallic ferromagnetic state with the underlying layers remaining in the insulating antiferromagnetic state.
Topics & Concepts
Antiferromagnetismvan der Waals forceRealization (probability)Materials scienceCondensed matter physicsElectric fieldMagnetic fieldField (mathematics)PhysicsQuantum mechanicsMoleculeMathematicsPure mathematicsStatistics2D Materials and ApplicationsQuantum and electron transport phenomenaGraphene research and applications