Memcapacitive to Memristive Transition in Al/Y <sub>2</sub> O <sub>3</sub> /GZO Crossbar Array
Sanjay Kumar, Mohit Kumar Gautam, Saurabh Yadav, Shaibal Mukherjee
Abstract
Here, we report both memcapacitive and memristive behaviors in a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{Y}_{{2}}\text{O}_{{3}}$ </tex-math></inline-formula> -based crossbar array size of ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4\times4$ </tex-math></inline-formula> ), which is fabricated by utilizing dual ion beam sputtering (DIBS) system. The fabricated crossbar array shows the memcapacitive behavior under the application of lower input voltage, while under the comparatively higher input voltage, it shows memristive behavior in switching response. Moreover, the transition from memcapacitive to memristive behavior is stable and reversible in nature and depends on the amplitude of the applied input voltage. The crossbar array devices show stable switching response in multiple switching cycles, excellent endurance (80 000 cycles) and retention ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$12\times 10^{{3}}$ </tex-math></inline-formula> s) properties, low device-to-device (D2D), and cycle-to-cycle (C2C) variabilities in device switching voltages, i.e., <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {SET}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {RESET}}$ </tex-math></inline-formula> . The synaptic functionalities are demonstrated in terms of potentiation (P) and depression (D) mechanisms and achieve least value of nonlinearity factor, i.e., 0.05 under the lower input voltage (1 V), wherein memcapacitive behavior is dominated.