Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers
Haochen Zhang, Yue Sun, Kunpeng Hu, Lei Yang, Kun Liang, Zhanyong Xing, Hu Wang, Mingshuo Zhang, Huabin Yu, Shi Fang, Kang Yang, Haiding Sun
Topics & Concepts
Materials scienceHigh-electron-mobility transistorOptoelectronicsPassivationHeterojunctionBarrier layerVoltageLayer (electronics)TransistorElectrical engineeringNanotechnologyEngineeringGaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials