Minimum Contact Resistance in Monoelemental 2D Material Nanodevices With Edge-Contacts
Mirko Poljak, Mislav Matić, Ante Zeljko
Abstract
We use atomistic quantum transport device simulations to investigate the contact resistance ( R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</sub> ) in monoelemental 2D material nanoribbon MOSFETs with edge contacts. The consequences of attaching metal electrodes to source/drain regions are investigated for various metal-channel interaction strengths and nanoribbon dimensions. We find that R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</sub> is minimized by using moderately interacting metallic materials, and that the minimum R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</sub> is ~ 150 Ω·μm in graphene, silicene and germanene, and ~ 430 Ω·μm in phosphorene nanodevices with edge contacts.