Room-Temperature O3 Detection: Zero-Bias Sensors Based on ZnO Thin Films
Eleonora Bolli, Alice Fornari, A. Bellucci, Matteo Mastellone, Veronica Valentini, Alessio Mezzi, Riccardo Polini, A. Santagata, D.M. Trucchi
Abstract
ZnO thin films with a thickness of 300 nm were deposited on Si and Al2O3 substrates using an electron beam evaporation technique with the aim of testing them as low cost and low power consumption gas sensors for ozone (O3). Scanning electron microscopy and atomic force microscopy were used to characterize the film surface morphology and quantify the roughness and grain size, recognized as the primary parameters influencing the gas sensitivity due to their direct impact on the effective sensing area. The crystalline structure and elemental composition were studied through Raman spectroscopy and X-ray photoelectron spectroscopy. Gas tests were conducted at room temperature and zero-bias voltage to assess the sensitivity and response as a function of time of the films to O3 pollutant. The results indicate that the films deposited on Al2O3 exhibit promising characteristics, such as high sensitivity and a very short response time (<2 s) to the gas concentration. Additionally, it was observed that the films display pronounced degradation effects after a significant exposure to O3.