Influence of oxygen-related defects on In-Ga-Sn-O semiconductor due to plasma-enhanced atomic layer deposition of Al2O3 for low-temperature thin-film transistor in terms of electrical properties
Hyeong Wook Kim, Changyong Oh, Hyunjae Jang, Min Young Kim, Bo Sung Kim
Topics & Concepts
Materials scienceAtomic layer depositionOxygenThin-film transistorThin filmFermi levelX-ray photoelectron spectroscopyPlasmaAnalytical Chemistry (journal)OptoelectronicsLayer (electronics)NanotechnologyElectronChemistryNuclear magnetic resonanceOrganic chemistryChromatographyPhysicsQuantum mechanicsThin-Film Transistor TechnologiesZnO doping and propertiesSemiconductor materials and devices