Litcius/Paper detail

C-Band High Harmonics Suppression GaN Power Amplifier MMIC for Multiradar Network Application

F.F Yang, Leijun Song, Yuehang Xu

2022IEEE Microwave and Wireless Technology Letters16 citationsDOI

Abstract

This letter presents a C-band 50-W high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on the 0.25- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> gallium nitride (GaN) high electron mobility transistor (HEMT) process. A multiple reactance matching method in output matching network (OMN) is proposed, which can achieve high harmonics suppression (HSs) while maintaining good bandwidth and low loss. The pulse excitation measurement results of the proposed MMIC show that the saturated output power exceeds 50 W in the 5–7-GHz frequency range, the power added efficiency (PAE) is more than 52%, the associated power gain is over 21 dB, and the second harmonic suppression (HS2) and the third harmonic suppression (HS3) reach more than 41 and 43 dBc, respectively. Besides, the area of the MMIC is <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3.55\times4.05$ </tex-math></inline-formula> mm2.

Topics & Concepts

Monolithic microwave integrated circuitAmplifierHigh-electron-mobility transistorHarmonicsGallium nitrideElectrical engineeringTransistordBcOptoelectronicsMaterials sciencePhysicsTopology (electrical circuits)EngineeringNanotechnologyVoltageLayer (electronics)CMOSGaN-based semiconductor devices and materialsAdvanced Power Amplifier DesignRadio Frequency Integrated Circuit Design