Giant Modulation of the Electron Mobility in Semiconductor Bi<sub>2</sub>O<sub>2</sub>Se via Incipient Ferroelectric Phase Transition
Ziye Zhu, Xiaoping Yao, Shu Yang Frank Zhao, Xiao Lin, Wenbin Li
Abstract
High-mobility layered semiconductors have the potential to enable the next-generation electronics and computing. This paper demonstrates that the ultrahigh electron mobility observed in the layered semiconductor Bi2O2Se originates from an incipient ferroelectric transition that endows the material with a robust protection against mobility degradation by Coulomb scattering. Based on first-principles calculations of electron–phonon interaction and ionized impurity scattering, it is shown that the electron mobility of Bi2O2Se can reach 104 to 106 cm2 V–1 s–1 over a wide range of realistic doping concentrations. Furthermore, a small elastic strain of 1.7% can drive the material toward a unique interlayer ferroelectric transition, resulting in a large increase in the dielectric permittivity and a giant enhancement of the low-temperature electron mobility by more than an order of magnitude. These results establish a new route to realize high-mobility layered semiconductors via phase and dielectric engineering.