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Dopingless Negative Capacitance Ferroelectric TFET for Breast Cancer Cells Detection: Design and Sensitivity Analysis

Shradhya Singh, Sangeeta Singh

2021IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control50 citationsDOI

Abstract

The current research article reports the electrical detection of breast cancer cell lines (MDA-MB-231, Hs578T, T47D, and MCF-7) by deploying dopingless negative capacitance (NC) ferroelectric (FE) tunnel field-effect transistor (DL-FE-TFET). This device has a double dual metal gate and two nanocavities engraved underneath both gate electrodes for higher detection sensitivity. Our work reports the detection of nontumorigenic cell (MCF-10A) and breast cancer cell lines by combining the NC effect of FE material and dopingless technology synergistically. Here, FE material amplifies the applied gate bias intrinsically. The in-depth electrostatic analysis in terms of surface potential, carrier concentration, energy band diagram, drive current, and electric field has been depicted. Variation of the dielectric constant of these breast cancerous cell lines dictates the detection mechanism in our reported biosensor. The sensitivity has been analyzed in terms of drive current, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\mathrm {ON}}/{I}_{\mathrm {OFF}}$ </tex-math></inline-formula> ratio, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}$ </tex-math></inline-formula> , and transconductance. The optimized cavity structure demonstrates significantly high drain current sensitivity of the order of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${2.88}\times {10}^{{9}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\mathrm {ON}}/{I}_{\mathrm {OFF}}$ </tex-math></inline-formula> ratio sensitivity of the order of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${3.2}\times {10}^{{5}}$ </tex-math></inline-formula> . In addition, the effect of device geometry variation, such as cavity length and FE layer thickness on the drain current sensitivity and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\mathrm {ON}}/{I}_{\mathrm {OFF}}$ </tex-math></inline-formula> sensitivity, transconductance sensitivity ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${S}_{g_{m}}$ </tex-math></inline-formula> ), and threshold voltage sensitivity ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${S}_{V_{\text {th}}}$ </tex-math></inline-formula> ) of the device, has also been investigated. This device structure may be deployed for the array-based screening and diagnosis of breast cancer cells lines, with additional benefits including a simpler mechanism of transduction, cost effectiveness, technology compatibility with CMOS process, adjustable electrical response, and reproducibility.

Topics & Concepts

TransconductanceMaterials scienceOptoelectronicsFerroelectricityCapacitanceSensitivity (control systems)TransistorField-effect transistorDielectricVoltageElectrodeElectrical engineeringChemistryElectronic engineeringEngineeringPhysical chemistryFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design
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