Room-Temperature Spin-Logic Operations in van der Waals Ferromagnet Fe<sub>3</sub>GaTe<sub>2</sub>
Longxing Jiang, Qingchao Li, Jingfeng Li, Haoran Guo, Chuangwen Wu, Zijun Luo, Rui Xiong, Min Zeng, Zhaochu Luo, Jinkui Zhao, Zuxin Chen, Zhaowei Zhang, Hao Wu
Abstract
Spin-logic devices based on magnetic domain walls utilize the fast motion, high density, nonvolatility, and flexible design of domain walls to process and store information. However, conventional spin-logic devices face fabrication challenges due to their structural complexity. Here, we report a spin-logic device based on the two-dimensional (2D) magnetic material Fe 3 GaTe 2, exploiting its significant layer-dependent perpendicular magnetic anisotropy and coercivity. We construct the stepped Fe 3 GaTe 2 device to induce antisymmetric magnetoresistance through the magnetic domain walls formed at the step boundaries and achieve the spin-logic function with three resistance states at room temperature. In addition, we demonstrate that the devices with even more states can be realized by enhancing the magnetic coupling across the domain walls. Our work provides a simple and effective method for the design of spin-logic devices and reveals the potential of 2D magnetic materials in the field of spintronics.