Selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off GaN HEMTs
Andrzej Taube, Maciej Kamiński, Marek Ekielski, R. Kruszka, Joanna Jankowska‐Śliwińska, Paweł Piotr Michałowski, Joanna Zdunek, Anna Szerling
Topics & Concepts
Materials scienceEtching (microfabrication)FabricationOptoelectronicsReactive-ion etchingInductively coupled plasmaPlasma etchingPlasmaThreshold voltageLayer (electronics)VoltageNanotechnologyTransistorElectrical engineeringEngineeringPathologyAlternative medicinePhysicsQuantum mechanicsMedicineGaN-based semiconductor devices and materialsPhotocathodes and Microchannel PlatesPlasma Diagnostics and Applications