FeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric
Xunzhao Yin, Chao Li, Qingrong Huang, Li Zhang, Michael Niemier, Xiaobo Sharon Hu, Cheng Zhuo, Kai Ni
Abstract
Ferroelectric field effect transistors (FeFETs) are being actively investigated with the potential for in-memory computing (IMC) over other nonvolatile memories (NVMs). Content addressable memories (CAMs) are a form of IMC that performs parallel searches for matched entries over a memory array for a given input query. CAMs are widely used for data-centric applications that involve pattern matching and search functionality. To accommodate the ever expanding data, it is attractive to resort to analog CAM for memory density improvement. However, the digital CAM design nowadays based on standard CMOS or emerging NVMs (e.g., resistive storage devices) is already challenging due to area, power, and cost penalties. Thus, it can be extremely expensive to achieve analog CAM with those technologies due to added cell components. As such, we propose, for the first time, a universal compact FeFET-based CAM design, FeCAM, with search and storage functionality enabled in digital and analog domains simultaneously. By exploiting the multilevel-cell (MLC) states of FeFET, FeCAM can store and search inputs in either digital or analog domain. We perform a device-circuit codesign of the proposed FeCAM and validate its functionality and performance using an experimentally calibrated FeFET model. Circuit level simulation results demonstrate that FeCAM can either store continuous matching ranges or encode 3-bit data in a single CAM cell. When compared with the existing digital CMOS-based CAM approaches, FeCAM is found to improve both memory density by 22.4× and energy saving by 8.6×/3.2× for analog/digital modes, respectively.In the CAM-related application, our evaluations show that FeCAM can achieve 60.5×/23.1× saving in area/search energy compared with conventional CMOS-based CAMs.