High‐Performance Spin Filters and Spin Field Effect Transistors Based on Bilayer VSe<sub>2</sub>
Baochun Wu, Ruge Quhe, Jie Yang, Shiqi Liu, Junjie Shi, Jing Lü, Honglin Du
Abstract
Abstract Recently, two‐dimensional (2D) magnetic van der Waals materials have drawn great attention as they are remarkably promising in numerous vital areas, such as data storage and information processing. Theoretically, bilayer (BL) 2H‐VSe 2 has been predicted to be an A‐type 2D antiferromagnetic van der Waals crystal (intralayer ferromagnetism and interlayer antiferromagnetism) and to have electrically‐induced half‐metallicity. Herein, by using ab initio quantum transport simulations, BL 2H‐VSe 2 spin devices are designed and spin‐resolved transport properties are investigated for the first time. The spin‐filter efficiency (SFE) of the dual‐gated BL 2H‐VSe 2 spin filter reaches up to 99%, and the conductance on‐off ratio of this device is up to 10 6 . Also, the conductance on‐off ratio of the quadruple‐gated BL 2H‐VSe 2 spin field effect transistor can reach 4 × 10 3 after reversing the spin direction. This work shows the high performance of the BL 2H‐VSe 2 in spintronic devices and will motivate further studies of the spin devices based on this kind of material.