Effect of Lateral Charge Diffusion on Retention Characteristics of 3D NAND Flash Cells
Ho-Nam Yoo, Bongsik Choi, Jong-Won Back, Ho-Jung Kang, Eunmee Kwon, Sungyong Chung, Jong‐Ho Bae, Byung‐Gook Park, Jong‐Ho Lee
Abstract
Retention characteristics of 3D NAND Flash cells are investigated at various temperatures ( T) depending on the degree of program and erase. The ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> for each condition is compared to understand the degradation of the retention characteristics attributable to vertical loss and/or lateral diffusion. In addition, the relationship between Program/Erase (PE) window (PGM V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> - Erase V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) and ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> are analyzed. In the case when PGM V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> is the same, the ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> decreases as the PE window decreases. At temperatures below 150 °C, ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> and PE window show linear relationship, and as PE window decreases, ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> also decreases to 0. On the other hand, at 250 °C, ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> has a non-zero value even if PE window decreases to 0, thus has a non-linear relationship. The measurement results show that the lateral diffusion has a great influence on the short-term retention of 3D NAND flash cells.