Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching
Sangwoo Han, Jianan Song, Sang Ha Yoo, Ziguang Ma, Robert M. Lavelle, David W. Snyder, Joan M. Redwing, Thomas N. Jackson, Rongming Chu
Abstract
This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.
Topics & Concepts
Schottky barrierSchottky diodeOptoelectronicsHeterojunctionDopingMaterials scienceDiodeMetal–semiconductor junctionWide-bandgap semiconductorVoltageCharge (physics)Breakdown voltageElectrical engineeringPhysicsEngineeringQuantum mechanicsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesGa2O3 and related materials