CuInS <sub>2</sub> quantum dots-based unipolar resistive switching for non-volatile memory applications
Harshit Sharma, Nitish Saini, Lalita, Divya Kaushik, Ajeet Kumar, Ritu Srivastava
Abstract
CuInS 2 QDs are employed as a functional layer in a memristive device with an Al/CuInS 2 /ITO configuration featuring unipolar resistive switching behavior with high on/off ratio and excellent reproducibility.
Topics & Concepts
Quantum dotResistive touchscreenQuantum memoryMaterials scienceOptoelectronicsResistive random-access memoryNon-volatile memoryQuantumChemistryComputer sciencePhysicsQuantum computerElectrodeQuantum mechanicsPhysical chemistryQuantum networkComputer visionAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering