Performance Analysis of Forming Free Switching Dynamics of <i>e</i>-Beam Evaporated SnOx Based Resistive Switching Device
Chandra Prakash Singh, Saurabh Kumar Pandey
Abstract
In this article, we have investigated the forming free bipolar resistive switching (RS) phenomena of <inline-formula> <tex-math notation="LaTeX">${e}$ </tex-math></inline-formula>-beam evaporated amorphous tin-oxide-based RS device with copper as a bottom electrode. To describe the impact of copper electrode over electrical response of tin-oxide-based RS device, we have used tungsten probe tip contact as a top electrode and copper as a bottom electrode. The crystal structure, energy bandgap, surface morphology, and device cross-sectional nanostructure view of deposited thin RS layer (tin-oxide) have been characterized by using X-ray diffraction (XRD), UV–visible spectroscopy, and field-emission scanning electron microscopy (FESEM), respectively. The electrical behavior of fabricated switching device has been recorded by Keithley-4200 parametric analyzer with customized probe station. Reported switching device has capability to perform reversible RS phenomena for 500 cycles with low set/reset (−0.52/0.39 V) voltage and good resistive window (~15) without any considerable degradation. We have also discussed the primary reason for RS dynamics in the proposed device along with its conduction mechanism.