Na<sub>2</sub>SO<sub>4</sub>-Regulated High-Quality Growth of Transition Metal Dichalcogenides by Controlling Diffusion
Yuanyuan Jin, Miao Cheng, Hang Liu, Miray Ouzounian, Travis Shihao Hu, Bingying You, Gonglei Shao, Xiao Liu, Yeru Liu, Huimin Li, Shisheng Li, Jie Guan, Song Liu
Abstract
The high diffusion rate of sulfur with respect to metal oxide creates precursors that deviate from the stoichiometric ratio, leading to poor growth controllability and defects in the as-grown transition metal dichalcogenides (TMDCs). The introduction of a sulfur precursor with a high melting point is a hopeful strategy to solve these problems. Here, we first introduce sodium sulfate (Na2SO4) as a sulfur precursor, which plays roles in tuning diffusion of source precursors and balancing their mass flux based on the temperature-confined decomposition of Na2SO4. We deduced the specific growth process by characterizing the composition of intermediates; the results show that emissions of sulfur and metal sources were synchronously released and spanning the entire growth stage. This temperature-controlled source-feeding system reduced the diffusion gap between sulfur and metal, which promoted a faster kinetics for reactions. Moreover, this method has the wide applicability for producing other TMDCs.