Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure
Н. В. Морозова, Igor V. Korobeinikov, N. V. Abrosimov, Sergey V. Ovsyannikov
Abstract
Si–Ge crystals are promising materials for use in various stress-controlled electronic junctions for next-generation nanoelectronic devices.
Topics & Concepts
Materials scienceGermaniumSiliconThermoelectric effectSeebeck coefficientEngineering physicsGermanium compoundsOptoelectronicsHigh pressureSilicon-germaniumComposite materialThermodynamicsThermal conductivityEngineeringPhysicsNanowire Synthesis and ApplicationsSemiconductor materials and devicesSemiconductor materials and interfaces