Topological Field-Effect Transistor Based on Quasi-Two-Dimensional Tellurium Flakes
Bin Cheng, Lin Li, Nan Zhang, Ling Zhang, Xianglin Li, Zhiyong Lin, Hui Li, Zhengfei Wang, Changgan Zeng
Abstract
The emergent topological semimetals have received considerable attention for developing innovative devices, mainly due to their novel topological electronic properties with high robustness against external perturbations. Progress has been hindered, though, due to a lack of tunability. Here the authors address this challenge by constructing a field-effect device based on thin flakes of tellurium, a semiconductor with a chiral Weyl node. In this device, the conducting and topological states can be simultaneously switched electrostatically, yielding giant modulations of both channel conductivity and chiral-anomaly-induced magnetoresistance.
Topics & Concepts
TelluriumTopology (electrical circuits)Robustness (evolution)TransistorMaterials scienceSemimetalSemiconductorField-effect transistorMagnetoresistanceOptoelectronicsPhysicsMagnetic fieldSiliconQuantum mechanicsElectrical engineeringVoltageEngineeringChemistryMetallurgyGeneBiochemistryTopological Materials and PhenomenaGraphene research and applications2D Materials and Applications