Reliability of STT-MRAM for various embedded applications

S. H. Han, Ji‐Hyun Lee, Kyung‐Soo Suh, K. T. Nam, D.-E. Jeong, Sechang Oh, S. H. Hwang, Younggeun Ji, Kyoobin Lee, Kyoobin Lee, Youjian Song, Youngki Hong, G.T. Jeong

202112 citationsDOI

Abstract

Owing to tunability of MTJ stack characteristics based on perpendicular magnetic anisotropy control via sophisticated magnetic material engineering, STT-MRAM can meet a wide range of product specifications for various applications: 1) flash-type applications such as microcontroller and AI inferencing device and 2) SRAM-type applications such as frame buffer memory. However each application has different reliability challenges. In this paper, we discuss the reliability requirements for Flash-type and SRAM-type STT-MRAM, verifying superb reliability of highly tunable STT-MRAM technology.

Topics & Concepts

Magnetoresistive random-access memoryReliability (semiconductor)Stack (abstract data type)Static random-access memoryComputer scienceFlash memoryFlash (photography)Frame (networking)Electronic engineeringElectrical engineeringEmbedded systemRandom access memoryComputer hardwareEngineeringPower (physics)PhysicsProgramming languageTelecommunicationsOpticsQuantum mechanicsMagnetic properties of thin filmsMagnetic Properties and ApplicationsCharacterization and Applications of Magnetic Nanoparticles