Voltage control of magnetic domain wall injection into strain-mediated multiferroic heterostructures
Hao-Miao Zhou, Shengbin Shi, Diqing Nian, Shuting Cui, Jing Luo, Yang Qiu, Han Yang, Mingmin Zhu, Guoliang Yu
Abstract
), which is drastically lower than the traditional magnetic field and STT driven magnetization switching. A fast-overall injection time within ∼3.4 ns under continuous injection is also demonstrated. Further reduction of energy consumption and injection time can be achieved by optimization of the structure and material selections. The present design and computational analyses can provide an additional efficient method to realize low-power and high-speed spintronic and magnonic devices.
Topics & Concepts
SpintronicsMaterials scienceMagnetizationCondensed matter physicsMagnetic anisotropyMagnetNanowireVoltageMagnetic fieldOptoelectronicsFerromagnetismElectrical engineeringPhysicsEngineeringQuantum mechanicsMagnetic properties of thin filmsMultiferroics and related materialsAcoustic Wave Resonator Technologies