Core Fluorination Enhances Solubility and Ambient Stability of an IDT‐Based n‐Type Semiconductor in Transistor Devices
Thomas Hodsden, Karl J. Thorley, Julianna Panidi, Aniruddha Basu, Adam V. Marsh, Haojie Dai, Andrew J. P. White, Changsheng Wang, William J. Mitchell, Florian Glöcklhofer, Thomas D. Anthopoulos, Martin Heeney
Abstract
Abstract The synthesis of a novel fluorinated n‐type small molecule based on an indacenodithiophene core is reported. Fluorination is found to have a significant impact on the physical properties, including a surprisingly dramatic improvement in solubility, in addition to effectively stabilizing the lowest‐unoccupied molecular orbital energy (−4.24 eV). Single‐crystal analysis and density functional theory calculations indicate the improved solubility can be attributed to backbone torsion resulting from the positioning of the fluorine group in close proximity to the strongly electron‐withdrawing dicyanomethylene group. Organic thin‐film transistors made via blade coating display high electron mobility (up to 0.49 cm 2 V −1 s −1 ) along with good retention of performance in ambient conditions.