Wide-Bandgap Semiconductors: A Critical Analysis of GaN, SiC, AlGaN, Diamond, and Ga2O3 Synthesis Methods, Challenges, and Prospective Technological Innovations
Luckman Yeboah, Ayinawu Abdul Malik, Peter Agyemang Oppong, Prince Acheampong, Joseph Morgan, Rose Addo, Boris Williams Henyo, Stephen Taylor, Wolalorm Makafui Zudor, Samuel Osei-Amponsah
Abstract
The increasing demand for high-performance Wide-Bandgap (WBG) semiconductors, including GaN, SiC, and emerging Ultrawide-Bandgap (UWBG) materials such as Ga2O3 and diamond, has driven significant advancements in epitaxial growth techniques. However, achieving scalability, defect-free growth, and sustainability remains a major challenge. This review systematically evaluates Molecular Beam Epitaxy (MBE), Metal-Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), and other novel growth and hybrid growth techniques, emphasizing energy efficiency, defect control, and environmental impact. Industry 4.0-driven AI-based process optimization and closed-loop recycling have emerged as transformative strategies, reducing waste and improving manufacturing efficiency. Key findings reveal that HVPE enables rapid defect-free GaN fabrication, Hot-Filament CVD enhances SiC growth with superior thermal properties, and Atomic Layer Epitaxy (ALE) achieves sub-nanometer precision crucial for next-generation quantum and RF applications. Despite these advancements, p-type doping in UWBG materials, substrate compatibility, and thermal management remain unresolved challenges. Future research must focus on scalable eco-friendly epitaxy, novel doping mechanisms, and policy-driven sustainability efforts. This review provides a comprehensive roadmap for sustainable WBG semiconductor manufacturing, bridging materials innovation, energy efficiency, and industrial adoption to support the next generation of power electronics and optoelectronics.