Suppressing solvent compositional change during solution growth of SiC using SiC/C gradient crucible
Sakiko Kawanishi, Hironori Daikoku, Hiroyuki Shibata, Takeshi Yoshikawa
Topics & Concepts
Crucible (geodemography)Silicon carbideGraphiteMaterials scienceTemperature gradientMicro-pulling-downCrystal growthFabricationPorosityCarbideCarbon fibersThermoelectric effectGrain growthSiliconMineralogyComposite materialMetallurgyCrystallographyChemistryMicrostructureComposite numberThermodynamicsQuantum mechanicsPhysicsPathologyComputational chemistryMedicineAlternative medicineAdvanced ceramic materials synthesisSilicon Carbide Semiconductor TechnologiesAluminum Alloys Composites Properties