Emerging weak antilocalization effect in Ta0.7Nb0.3Sb2 semimetal single crystals
Meng Xu, Lei Guo, Lei Chen, Ying Zhang, Shuangshuang Li, Weiyao Zhao, Xiaolin Wang, Shuai Dong, Ren‐Kui Zheng
Abstract
Weak antilocalization (WAL) effect is commonly observed in 2D systems, or 3D topological insulators, topological semimetal systems. Here we report the clear sign of WAL effect in high quality Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ single crystals, in below 50$^\circ$ K region. The chemical vapor transport method was employed to grow the single crystal samples, the high crystallization quality and uniform element distribution are verified by X-ray diffractions and electron microscopy techniques. Employing the Hall effect and two-band model fitting, the high carrier mobility (> 1000 cm$^2$V$^{-1}$s$^{-1}$ in 2 to 300$^\circ$ K region) and off-compensation electron/hole ratio are obtained. Due to the different angular dependence of WAL effect and the fermiology of Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ single crystal, interesting magnetic-field-induced symmetry change is observed in angular magnetoresistance. These interesting transport properties will lead to more theoretical and applicational exploration in Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ and related semimetal materials.