Self-Rectifying Resistive Memory with a Ferroelectric and 2D Perovskite Lateral Heterostructure
Jeonghyeon Son, Minsub Lee, Arindam Sannyal, Hojun Yun, Jaehui Cheon, Sumin Lee, Jong S. Park, Seok Ju Kang, Joonkyung Jang, Beomjin Jeong
Abstract
Integration of resistive switching and rectification functions in a single memory device is promising for high writing/readout accuracy with a simplified device architecture, but the realization remains challenging, especially with a low voltage operation. Herein, we developed self-rectifying resistive memory with a single memristive layer that can be operated at ultralow voltages with an excellent rectification ratio. The memristive layer consisted of a phase-separated lateral heterostructure of a ferroelectric polymer, poly(vinylidene fluoride- co -trifluoroethylene) [P(VDF-TrFE)], and a 2D halide perovskite, butylammonium lead iodide (BA 2 PbI 4 ), which could be readily fabricated by spin-casting. Systematic characterization revealed that a lateral ferroelectric polarization from self-poled P(VDF-TrFE) could rectify the current flow into the BA 2 PbI 4 channel. The resistive memory consisting of Ag/P(VDF-TrFE):BA 2 PbI 4 /indium tin oxide exhibited a high resistance switching ratio of >10 6 programmable at ±0.4 V and an excellent rectification ratio of >10 6 at ±0.1 V, along with a long data retention and stable endurance cycles.