Ferroelectric polymers for non‐volatile memory devices: a review
Huilin Li, Ruopeng Wang, Su‐Ting Han, Ye Zhou
Abstract
Abstract Ferroelectric memories have attracted great attention for data storage, and ferroelectric polymers have been widely studied with the development of flexible and wearable devices. The multifunctional capabilities, non‐volatile memory state, low power consumption, long durability, fast switching, chemical stability and mechanical flexibility make them good candidates for various memories, such as ferroelectric tunnel junctions and diodes, ferroelectric capacitors, resistive memories and field‐effect transistors. Here, recent advances in the research of these ferroelectric polymer memories are summarized, and challenges in the development of smart electronics are also discussed. © 2020 Society of Chemical Industry