Double spin-torque magnetic tunnel junction devices for last-level cache applications

G. Hu, Christopher Safranski, J. Z. Sun, Pouya Hashemi, S. Brown, J. Bruley, L. Buzi, C. D’Emic, E. Galligan, M. Gottwald, O. Gunawan, J. Lee, S. Karimeddiny, P. L. Trouilloud, D. C. Worledge

20222022 International Electron Devices Meeting (IEDM)32 citationsDOI

Abstract

We experimentally demonstrate reliable 300 ps switching in arrays of 35 nm double spin-torque magnetic tunnel junctions (DS-MTJs), and also demonstrate a new free-layer design with improved activation energy and magnetoresistance. We establish a new method to characterize the DS-MTJ devices for materials feedback, by introducing and experimentally verifying a simple device-physics model. The model and data show that, compared to a single MTJ (SMTJ), the DS-MTJ has lower switching current, faster switching speed, and better dependence on resistance-area product (RA), meeting key requirements for last-level cache.

Topics & Concepts

Tunnel magnetoresistanceTorqueMagnetoresistive random-access memoryMagnetoresistanceSpin-transfer torqueMaterials scienceOptoelectronicsCacheTunnel junctionSpin (aerodynamics)Electrical engineeringComputer scienceElectronic engineeringLayer (electronics)EngineeringNanotechnologyMagnetic fieldPhysicsQuantum tunnellingMagnetizationMechanical engineeringRandom access memoryComputer hardwareQuantum mechanicsOperating systemThermodynamicsMagnetic properties of thin filmsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices