Quantum Dot Interface-Mediated CsPbIBr<sub>2</sub> Film Growth and Passivation for Efficient Carbon-Based Solar Cells
Xingnan Qi, Jiantao Wang, Furui Tan, Chen Dong, Kong Liu, Xiaobao Li, Lisheng Zhang, Hongkai Wu, Hsing‐Lin Wang, Shengchun Qu, Zhanguo Wang, Zhanguo Wang, Zhijie Wang, Zhijie Wang
Abstract
CsPbIxBry-based all-inorganic perovskite materials are a potential candidate for stable semitransparent and tandem structured photovoltaic devices. However, poor film (morphological and crystalline) quality and interfacial recombination lead consequently to a decline in the photoelectric conversion performance of the applied solar cells. In this work, we incorporated PbS quantum dots (QDs) at the interface of electron transporting layer (ETL) SnO2 and perovskite to modulate the crystallization of CsPbIBr2 and the interfacial charge dynamics in carbon-based solar cells. The as-casted PbS QDs behave as seeds for lattice-matching the epitaxial growth of pinhole-free CsPbIBr2 films. The modified films with reduced defect density exhibit facilitated carrier transfer and suppressed charge recombination at the ETL/perovskite interface, contributing to an enhanced device efficiency from 7.00 to 9.09% and increased reproducibility and ambient stability. This strategic method of QD-assisted lattice-matched epitaxial growth is promising to prepare high-quality perovskite films for efficient perovskite solar cells.