Litcius/Paper detail

Field-free switching of magnetic tunnel junctions driven by spin–orbit torques at sub-ns timescales

Viola Krizakova, Kevin Garello, Eva Grimaldi, Gouri Sankar Kar, Pietro Gambardella

2020Applied Physics Letters60 citationsDOIOpen Access PDF

Abstract

We report time-resolved measurements of magnetization switching by spin–orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJs). Field-free switching is enabled by the dipolar field of an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measurements provide direct evidence of magnetization reversal and switching distributions. Close to the critical switching voltage, we observe stochastic reversal events due to a finite incubation delay preceding the magnetization reversal. Upon increasing the pulse amplitude to twice the critical voltage, the reversal becomes quasi-deterministic, leading to reliable bipolar switching at sub-ns timescales in zero external field. We further investigate the switching probability as a function of dc bias of the MTJ and external magnetic field, providing insight into the parameters that determine the critical switching voltage.

Topics & Concepts

Condensed matter physicsMagnetizationAmplitudeMagnetic fieldSwitching timeTorqueTunnel magnetoresistanceFerromagnetismDipoleHysteresisMagnetic hysteresisMagnetic anisotropyPhysicsPerpendicularMaterials scienceField (mathematics)Pulse (music)Magnetoresistive random-access memoryDemagnetizing fieldMagnetization reversalBiasingGeomagnetic reversalMicromagneticsMagnetic dipoleMagnetic momentMagnetization dynamicsDC biasMagnetic domainCurrent (fluid)Spin (aerodynamics)Magnetic reactanceRemanenceMagnetostaticsMagnetic properties of thin filmsQuantum and electron transport phenomenaTopological Materials and Phenomena