A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications
Liang Chen, Huimin Wang, Qianqian Huang, Ru Huang
Topics & Concepts
Molybdenum disulfideSubthreshold conductionCapacitanceMaterials scienceTransistorOptoelectronicsField-effect transistorSwingLogic gatePower (physics)Stack (abstract data type)Electrical engineeringPhysicsEngineeringComputer scienceVoltageElectrodeMetallurgyAcousticsProgramming languageQuantum mechanicsFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design