Two-dimensional α-In2Se3 field effect transistor for wide-band photodetection and non-volatile memory
Aniello Pelella, Kimberly Intonti, Loredana Viscardi, O. Durante, Daniele Capista, M. Passacantando, Filippo Giubileo, P. Romano, Mohammed Ali S. Alshehri, Manal Safar G. Alghamdi, Monica F. Craciun, Saverio Russo, Antonio Di Bartolomeo
Abstract
Mechanically exfoliated two-dimensional α-In2Se3 flakes are used as the channel material in field effect transistors. N-type conduction with 0.14cm2Vs carrier mobility is reported. The good gate modulation and the pronounced hysteresis make the device suitable for a wide range of applications, from digital logics to memories. An order of magnitude current increase is observed under illumination by a blue light at the incident optical power of 19 nW. The devices can work as visible-to-infrared wide-band photodetectors with time response of few-hundred milliseconds, responsivity up to 40A/W and specific detectivity D*=5⋅1011Jones at low light intensity.